FDS6614A Datasheet, MOSFET, Fairchild Semiconductor

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FDS6614A Features and benefits

9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench techn.

FDS6614A Application

where low in-line power loss and fast switching are required. Features 9.3 A, 30 V. RDS(on) = 0.018 W @ VGS =.

FDS6614A Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.

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